Nanowerk August 17, 2022 Compute-in-memory (CIM) based on resistive random-access memory (RRAM) meets the energy demand on edge devices by performing AI computation directly within RRAM. Although efficiency, versatility and accuracy are all indispensable for broad adoption of the technology, the inter-related trade-offs among them cannot be addressed by isolated improvements on any single abstraction level of the design. By co-optimizing across all hierarchies of the design from algorithms and architecture to circuits and devices, a team of researchers in the US (Stanford University, UC San Diego, University of Notre Dame, Pittsburg University) has developed NeuRRAM—a RRAM-based CIM chip that […]
Tag Archives: Edge computing
Engineers build artificial intelligence chip
Science Daily June 13, 2022 An international team of researchers (USA – MIT, University of Cincinnati, Harvard University, Stanford University, Washington University, Lawrence Berkeley National Laboratory, Lawrence Berkeley National Laboratory, South Korea, China) has developed stackable and replaceable hetero-integrated chips that use optoelectronic device arrays for chip-to-chip communication and neuromorphic cores based on memristor crossbar arrays for highly parallel data processing. They created a system with these chips that can directly classify information from a light-based image source.The system was modified by inserting a preprogrammed neuromorphic denoising layer that improves the classification performance in a noisy environment. Their technology can […]
Brain-inspired memory device
Science Daily September 2, 2021 Profuse dendritic-synaptic interconnections among neurons in the neocortex embed intricate logic structures enabling sophisticated decision-making and dynamically reconfigure providing flexibility and adaptability to changing environments. To advance the performance of logic circuits, an international team of researchers (Singapore, Ireland, USA – industry, university of Oklahoma, Texas A&M College Station) used voltage-driven conditional logic interconnectivity among five distinct molecular redox states of a metal–organic complex to embed a ‘thicket’ of decision trees having 71 nodes within a single memristor. The resultant current–voltage characteristic of this molecular memristor exhibited eight recurrent and history-dependent non-volatile switching transitions between […]