Bending an organic semiconductor can boost electrical flow

Science Daily  December 3, 2019 Slightly bending semiconductors made of organic materials can roughly double the speed of electricity flowing through them. An international team of researchers (USA – Rutgers University, UMass Amherst, Japan, South Korea) shows a very strong, anisotropic, and reversible modulation of the intrinsic (trap‐free) charge carrier mobility of single‐crystal rubrene transistors with strain, showing that the effective mobility of organic circuits can be enhanced by up to 100% with only 1% of compressive strain. This study lays the foundation of the strain engineering in organic electronics and advances the knowledge of the relationship between the carrier […]