First steps towards revolutionary ULTRARAM™ memory chips

Science Daily  March 29, 2021 Researchers in the UK have implemented ULTRARAM which is a III-V compound semiconductor memory concept that exploits quantum resonant tunneling to achieve nonvolatility at extremely low switching energy per unit area. They exploited resonant tunneling that allows a barrier to switch from opaque to transparent by applying a small voltage. ULTRARAM™, is a working implementation of the so-called ‘universal memory’, with all the advantages of DRAM and flash, with none of the drawbacks. They integrated ULTRARAM™ devices into small (4-bit) arrays which allowed them to experimentally verify the memory architecture that would form the basis […]

Microchips of the future: Suitable insulators are still missing

Nanowerk  March 9, 2021 The demands placed by CMOS logic circuits at their ultimate scaling limits could be satisfied by a number of layered 2D materials. Hexagonal boron nitride (hBN) is widely considered to be the most promising gate insulator for meeting challenging requirements for gate insulators. An international team of researchers (Austria, Russia, Switzerland, Japan, Saudi Arabia) assess the material parameters and performance limits of hBN. They compared experimental and theoretical tunnel currents through ultrathin layers of hBN and other 2D gate insulators, including the ideal case of defect-free hBN. Though its properties make hBN a candidate for many […]