Nanowerk  June 9, 2023 Much of the hardware and sensors electronic devices rely on magnetoresistive random access memory (MRAM) and magnetic sensors. In magnetoresistive devices when the magnets are aligned, electrons can easily tunnel through the thin insulating barrier between them making the device efficient; when magnets are not aligned the device is less efficient due to higher resistance. Current tunnel magnetoresistive devices comprise magnesium oxide and iron-based magnetic alloys, like iron-cobalt. Iron-based alloys have a body-centered cubic crystal structure in ambient conditions and exhibit a huge tunnel magnetoresistance effect in devices with a rock salt-type magnesium oxide. Researchers in […]