FEFU scientists are paving way for future tiny electronics and gadgets

EurekAlert  August 27, 2020 An international team of researchers (Russia, South Korea, Australia) suggest a new approach to manage spin-electronic properties and functionality of the thin-film magnetic nanosystems. For their experiment they grew a series of palladium films with an ideal single crystal structure. The surface of palladium was coated by thin films of platinum and a magnetic alloy. The system was capped with different variants of materials such as magnesium oxide, tantalum, ruthenium. The capping material influenced the magnetic anisotropy strongly. The deposited Pt and CoFeSiB layers repeated the morphology of the Pd surface. The method is important for […]

‘Fool’s gold’ may be valuable after all

Phys.org July 30, 2020 Magnetoionic devices either electrically tune a known ferromagnet or electrically induce ferromagnetism from another magnetic state which is a limitation for practical use. A team of researchers in the US (University of Minnesota, Augsburg University) took the non-magnetic iron sulfide material and put it in a device in contact with an ionic solution. When they applied as little as 1 volt positively charged molecules were moved to the interface between the electrolyte and iron sulfide, and induced magnetism. Importantly, they were able to turn off the voltage and return the material to its non-magnetic state. The […]

Researchers close in on new nonvolatile memory

Nanowerk  December 10, 2019 The emergence of ferroelectricity in nanometer-thick films of doped hafnium oxide (HfO2) makes this material a promising candidate for use in Si-compatible non-volatile memory devices. To make ferroelectric capacitors usable as memory cells, their remnant polarization has to be maximized. An international team of researchers (Germany, Russia, USA – North Carolina State University, University of Nebraska) developed a new methodology to experimentally quantify the polarization-dependent potential profile across a few-nanometer-thick ferroelectric Hf0.5Zr0.5O2 thin films. They found the electric potential profile across the Hf0.5Zr0.5O2 layer to be non-linear and changes with in-situ polarization switching. The non-linear potential […]

Introducing ‘mesh,’ memory-saving plug-in to boost phone and computer performance

Science Daily  September 19, 2019 Applications like web browsers or smartphone apps often use a lot of memory. To address this ,researcher at the UMass. Amherst, have developed a system they call Mesh that can automatically reducee such memory demands. Programs written in C-like languages can suffer from serious memory fragmentation. Mesh effectively squeezes out these gaps by taking advantage of virtual memory of the hardware. Mesh finds chunks of memory that can be interleaved and reclaims the memory from one of the chunks by combining the two chunks into just one. According to the researchers the results to date […]

Discovery of a ‘holy grail’ with the invention of universal computer memory

EurekAlert  June 20, 2019 An international team of researchers (UK, Spain) has developed an oxide-free, floating-gate memory cell based on II-V semiconductor heterostructures with a junctionless channel and non-destructive read of the stored data. While writing data to DRAM is fast and low energy, the data is volatile and must be continuously ‘refreshed’ to avoid it being lost. This is clearly inconvenient and inefficient. Flash stores data robustly, but writing and erasing is slow, energy intensive and deteriorates data, making it unsuitable for working memory. The new device combines the advantages of both without their drawbacks…read more. Open Access TECHNICAL […]