MIT engineers grow “perfect” atom-thin materials on industrial silicon wafers

MIT News  January 18, 2023 Two-dimensional materials and their heterostructures show a promising path for next-generation electronics. Nevertheless, 2D-based electronics have not been commercialized, owing mainly to three critical challenges: i) precise kinetic control of layer-by-layer 2D material growth, ii) maintaining a single domain during the growth, and iii) wafer-scale controllability of layer numbers and crystallinity. An international team of researchers (USA – MIT, UT Dallas, UC Riverside, Washington University, South Korea) has introduced a deterministic, confined-growth technique that can tackle these three issues simultaneously, thus obtaining wafer-scale single-domain 2D monolayer arrays and their heterostructures on arbitrary substrates. They geometrically confined the […]