Nanowerk July 10, 2023 Phase change memory could potentially revolutionize data storage because of its high storage density, and faster read and write capabilities. But still, the complex switching mechanism and intricate fabrication methods associated with these materials have posed challenges for mass production. Unlike conventional amorphous-crystalline PCMs, NbTe4 demonstrates both a low melting point and a high crystallization temperature. This unique combination offers reduced reset energies and improved thermal stability at the amorphous phase. Researchers in Japan fabricated NbTe4 and evaluated its switching performance. It exhibited a significant reduction in operation energy compared to conventional phase-change memory compounds. The […]
Category Archives: Memory storage
Next-generation memory storage with novel block copolymer structures
Nanowerk June 28, 2023 For next-generation lithography and high-density memory devices, it is desirable to obtain densely and tetragonally packed inverted cylindrical microdomains, which are composed of the major block in the minor matrix. The inverted cylinders differ from conventional HEX cylinders, which consist of the minor block in the matrix of the major block. Researchers in South Korea utilized a binary blend of a polystyrene-b-poly(4-vinylpyridine) copolymer (S4VP) and polystyrene-b-poly(4-hydroxystyrene) copolymer (SHS), where the P4VP block exhibited a strong hydrogen bonding interaction with the PHS block. By carefully controlling the molecular weight ratio of S4VP and SHS as well as […]