Electrical engineers develop ‘beyond 5G’ wireless transceiver

Science Daily  July 12, 2019 An international team of researchers (USA – UC Irvine, France) fabricated a single-channel 115-135-GHz receiver prototype in a 55-nm SiGe BiCMOS which has max conversion gain of 32 dB and a min noise figure of 10.3 dB. They measured a data rate of 36 Gb/s at 30-cm distance with the received 8PSK signal being directly demodulated on-chip at a bit-error rate of 1e-6. The prototype occupies 2.5 x 3.5 mm² of die area, including PADs and test circuit and consumes a total dc power of 200.25 mW…read more. TECHNICAL ARTICLE