Beyond 1 and 0: Engineers boost potential for creating successor to shrinking transistors

Eurekalert  May 29, 2019 Through theory, design and simulations an international team of researchers (South Korea, USA – UT Dallas) developed the fundamental physics of a multi-value logic transistor that uses a novel configuration of two forms of zinc oxide combined to form a composite nanolayer, which is then incorporated with layers of other materials in a superlattice. The device is capable of two electronically stable and reliable intermediate states between 0 and 1, boosting the number of logic values per transistor from two to three or four. The multi-value transistors exhibited excellent performance characteristics, stable and reliable operation with […]