Nanowerk December 7, 2021 Memories using conventional 2D nanomaterials have limitations owing to the weak carrier trapping characteristics of the nanomaterials. To develop a transparent and flexible memory device an international team of researchers (South Korea, India) To develop a transparent and flexible memory device an international team of researchers (South Korea, India) formed monolayered zero-dimensional (0D) quantum dots in a vertically stacked composite structure and sandwiched them between two insulating 2D hexagonal boron nitride (h-BN) ultra-thin nanomaterial structures to produce a transparent and flexible device. The device maintains above 80% transparency and memory function even when bent. The maximum […]
Category Archives: Memory device
Brain-inspired memory device
Science Daily September 2, 2021 Profuse dendritic-synaptic interconnections among neurons in the neocortex embed intricate logic structures enabling sophisticated decision-making and dynamically reconfigure providing flexibility and adaptability to changing environments. To advance the performance of logic circuits, an international team of researchers (Singapore, Ireland, USA – industry, university of Oklahoma, Texas A&M College Station) used voltage-driven conditional logic interconnectivity among five distinct molecular redox states of a metal–organic complex to embed a ‘thicket’ of decision trees having 71 nodes within a single memristor. The resultant current–voltage characteristic of this molecular memristor exhibited eight recurrent and history-dependent non-volatile switching transitions between […]
Perovskite memory devices with ultra-fast switching speed
Science Daily June 22, 2021 Halide perovskite-based memory devices have limitations of slow switching speed which hinder their practical application in memory devices. Researchers in South Korea have successfully developed ultra-fast switching memory devices using halide perovskites by using a combined method of first-principles calculations and experimental verification. From a total of 696 compounds of halide perovskites candidates, Cs3Sb2I9 with a dimer structure was selected as the best candidate for memory application. They fabricated memory devices using the dimer-structured Cs3Sb2I9 to verify the calculation results. The devices were operated with an ultra-fast switching speed of 20 ns, which was more […]
Novel memory device can be written on and read out optically or electrically
Science Daily November 25, 2019 Researchers in Germany have demonstrated a new type of programmable organic capacitive memory called p‐i‐n‐metal‐oxide‐semiconductor (pinMOS) memory with the possibility to store multiple states. It can be written as well as read electrically and optically. The device shows excellent repeatability, an endurance of more than 104 write‐read‐erase‐read cycles, and currently already over 24 hours retention time. The working mechanism of the pinMOS memory under dynamic and steady‐state operations is investigated to identify further optimization steps. The results reveal that the pinMOS memory principle is promising as a reliable capacitive memory device for future applications in […]