Science Daily June 22, 2021
Halide perovskite-based memory devices have limitations of slow switching speed which hinder their practical application in memory devices. Researchers in South Korea have successfully developed ultra-fast switching memory devices using halide perovskites by using a combined method of first-principles calculations and experimental verification. From a total of 696 compounds of halide perovskites candidates, Cs3Sb2I9 with a dimer structure was selected as the best candidate for memory application. They fabricated memory devices using the dimer-structured Cs3Sb2I9 to verify the calculation results. The devices were operated with an ultra-fast switching speed of 20 ns, which was more than 100 times faster than the memory devices that used the layer-structured Cs3Sb2I9. Additionally, the use of lead-free perovskite eliminates environmental problems. The work offers an opportunity to design new materials for memory devices based on calculations and experimental verification…read more. Open Access TECHNICAL ARTICLEÂ
Four-step screening to identify HP materials for RSM. Credit: Nature Communications volume 12, Article number: 3527 (2021)Â