One transistor for all purposes

Nanowerk  March 19, 2019 Until now, organic semiconductors have failed to achieve high performance in highly integrated sub-100 nm transistors. Using a vertical field-effect transistor design with a channel length of only 40 nm and a footprint of 2 × 80 × 80 nm2, researchers in Germany show that high electrical performance with organic polymers can be realized when using electrolyte gating. These organic transistors combine high on-state current densities of above 3 MA cm−2, on/off current modulation ratios of up to 108 and large transconductances of up to 5,000 S m−1. These structures show promise for use in artificial neural networks, where they could operate as memristive devices with sub-100 fJ […]