Nanowerk  December 31, 2018 The new version of phase-change memory developed by an international team of researchers (Singapore, UK) reduces the switching time and allows memory cells to produce excellent stability. The manufacturing procedure uses a normal voltage pulse and requires no additional special materials. They reduced the switching time to 400 picoseconds by creating a single high amplitude voltage pulse and moderate duration to produce favorable atomic rearrangement in a material…read more. TECHNICAL ARTICLE