Nanowerk December 31, 2018
The new version of phase-change memory developed by an international team of researchers (Singapore, UK) reduces the switching time and allows memory cells to produce excellent stability. The manufacturing procedure uses a normal voltage pulse and requires no additional special materials. They reduced the switching time to 400 picoseconds by creating a single high amplitude voltage pulse and moderate duration to produce favorable atomic rearrangement in a material…read more. TECHNICAL ARTICLE
Crystals are formed around the glassy area when single pulse is used (left panel). Image of the pore of memory cell, used to switch the material (right panel).