Nanowerk December 7, 2021
Memories using conventional 2D nanomaterials have limitations owing to the weak carrier trapping characteristics of the nanomaterials. To develop a transparent and flexible memory device an international team of researchers (South Korea, India) To develop a transparent and flexible memory device an international team of researchers (South Korea, India) formed monolayered zero-dimensional (0D) quantum dots in a vertically stacked composite structure and sandwiched them between two insulating 2D hexagonal boron nitride (h-BN) ultra-thin nanomaterial structures to produce a transparent and flexible device. The device maintains above 80% transparency and memory function even when bent. The maximum ON/OFF ratio of the current for the devices was as large as 4 × 10, and the endurance was 5 × 104 cycles, and a retention time was larger than 1 × 105 s. An ultra-thin memory device can significantly increase the memory density, leading to the development of a flexible resistance-variable memory…read more. TECHNICAL ARTICLE