Nanowerk  December 7, 2021 Memories using conventional 2D nanomaterials have limitations owing to the weak carrier trapping characteristics of the nanomaterials. To develop a transparent and flexible memory device an international team of researchers (South Korea, India) To develop a transparent and flexible memory device an international team of researchers (South Korea, India) formed monolayered zero-dimensional (0D) quantum dots in a vertically stacked composite structure and sandwiched them between two insulating 2D hexagonal boron nitride (h-BN) ultra-thin nanomaterial structures to produce a transparent and flexible device. The device maintains above 80% transparency and memory function even when bent. The maximum […]