EurekAlert June 20, 2019
An international team of researchers (UK, Spain) has developed an oxide-free, floating-gate memory cell based on II-V semiconductor heterostructures with a junctionless channel and non-destructive read of the stored data. While writing data to DRAM is fast and low energy, the data is volatile and must be continuously ‘refreshed’ to avoid it being lost. This is clearly inconvenient and inefficient. Flash stores data robustly, but writing and erasing is slow, energy intensive and deteriorates data, making it unsuitable for working memory. The new device combines the advantages of both without their drawbacks…read more. Open Access TECHNICAL ARTICLE