Integrating optical components into existing chip designs

Nanowerk   April 20, 2018 An international team of researchers (Belgium, USA – MIT, UC Berkeley, University of Colorado, Boston University, SUNY Albany, Switzerland) introduced photonics into bulk silicon CMOS chips using a layer of polycrystalline silicon deposited on silicon oxide islands fabricated alongside transistors. They implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing. By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions, but […]

Breakthrough in circuit design makes electronics more resistant to damage and defects

Physorg  March 9,2018 An international team of researchers (USA – UT Austin, City College of New York, City University of New York, Israel) used nonlinear resonators to mold a band-diagram of the circuit array which was designed so that a change in signal intensity could induce a change in the band diagram’s topology. For low signal intensities, the electronic circuit was designed to support a trivial topology, and therefore provide no protection from defects. In this case, as defects were introduced into the array, the signal transmission and the functionality of the circuit were negatively affected… read more. TECHNICAL ARTICLE 

Researchers develop heat switch for electronics

Physorg  March 8, 2018 Researchers at the University of Illinois at Urbana Champaign engineered a specific heat flow path between the hot region and cold region, and then created a way to break the heat flow path when desired. The technology is based on the motion of a liquid metal droplet which can be positioned to connect a heat flow path or moved away from the heat flow path to limit the heat flow. In demonstrations, when the switch was on, they were able to extract heat at more than 10 W/cm2. When the switch was off, the heat flow […]

Chipmakers Test Ferroelectrics as a Route to Ultralow-Power Chips

IEEE Spectrum  February 26, 2018 Researchers at a company in the US chose a ferroelectric material that does not require ions or atoms to relocate which slows things down in ferroelectric materials. In their experimental 14-nm transistors, clouds of electrons around silicon-doped hafnium dioxide experience the polarization. Ring oscillators made with these transistors can switch at the same frequency as those made with the usual recipe, yet they require just 54 mV to achieve a tenfold increase in the current. Their devices require a 3- to 8-nm-thick layer of ferroelectric material, which is still relatively thick… read more. Related TECHNICAL […]

Innovative transistors based on magnetically induced movement of ions

Nanowerk December 27, 2017 The transport of paramagnetic FeCl4 ions in a liquid electrolyte (including [Bmim]FeCl4) demonstrated by researchers in Japan, was magnetically controlled to operate a typical electrochemical device; an Electric Double Layer Transistor (EDLT), a type of transistor that uses an EDL at a semiconductor/electrolyte interface to tune the electronic carrier density of the semiconductor. The device was successfully switched by a magnetic field, although the switching ratio was smaller than in conventional EDLTs that are controlled by an electric field. The research has the potential to realize innovative applications that have not been possible using conventional approaches. […]