Computing: Design for magnetoelectric device may improve memory

Science Daily   May 4, 2018
Existing devices require large magnetic and electric fields to switch the magnetic properties of the devices. Researchers at the University of Minnesota used the magnetic material to surround chromia (Cr2O3) providing a magnetic field through quantum mechanical coupling to Cr magnetic moments, while allowing devices to be arranged in a way that blocks stray magnetic fields from affecting nearby devices. An element to read out the state of the device is placed on top of the device. This could potentially pack more memory into a smaller space… read more. Open Access TECHNICAL ARTICLE 

This image shows the (a) side and (b) overhead views of the proposed switching element show the chromia at the center. Credit: Ahmed and Victora

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