Science Daily July 5, 2018
A team of researchers in the US (UT Dallas, University of Illinois, University of Houston) has found high thermal conductivity of 1000 ± 90 W/m/K at room temperature in cubic boron arsenide grown through modified chemical vapor transport technique. The thermal conductivity is a factor of 3 higher than that of silicon carbide and surpassed only by diamond and the basal plane value of graphite. Boron arsenide could be a potential revolutionary thermal management material… read more. TECHNICAL ARTICLE
Because the semiconducting material efficiently transports heat, it might be used in future electronics to help keep smaller, more powerful devices from overheating. Credit: University of Texas at Dallas