Nanowerk December 22, 2022
An international team of researchers (USA – Georgia Institute of Technology, National High Magnetic Field Laboratory, France) has demonstrated that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state formed a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon–ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. According to the researchers this makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics…read more. Open Access TECHNICAL ARTICLE
The epigraphene edge state. Credit: Nature Communications volume 13, Article number: 7814 (2022)Â