At the edge of graphene-based electronics

Nanowerk  December 22, 2022 An international team of researchers (USA – Georgia Institute of Technology, National High Magnetic Field Laboratory, France) has demonstrated that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state formed a zero-energy one-dimensional ballistic network […]