Phys.org August 9, 2024 An international team of researchers (Switzerland, Chia) characterized the atomic structure of cyclo-P5 assembled on Ag(111). They found that a strong charge transfer induced an inward dipole moment at the cyclo-P5/Ag interface as well as the formed an interface state. They probed the image potential states and quantified the increase of the local change of work function. According to the researchers their approach suggested that the cyclo-P5/Ag interface has the characteristic ingredients of a p-type semiconductor-metal Schottky junction with potential applications in field-effect transistors, diodes, or solar cells… read more. Open Access TECHNICAL ARTICLE
Tag Archives: transistors
New transistor’s superlative properties could have broad electronics applications
MIT News July 26, 2024 Ferroelectric materials change polarization in response to an electric field and are useful for memory. However, these materials often suffer from fatigue as they are cycled many times, capping their lifetime. An international team of researchers (USA – MIT, Harvard, Japan) investigated the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a different form of atomically thin 2D ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. They examined the FeFET device employing monolayer graphene as the channel layer, […]
MIT engineers “grow” atomically thin transistors on top of computer chips
MIT News April 27, 2023 Semiconductor chips are traditionally made with bulk materials, which are boxy 3D structures, so stacking multiple layers of transistors to create denser integrations is very difficult. Semiconductor transistors made from ultrathin 2D materials, each only about three atoms in thickness, could be stacked up to create more powerful chips. Using a low-temperature growth process that does not damage the chip, an international team of researchers (USA – MIT, Oak Ridge National Laboratory, Sweden) has demonstrated a novel technology that can effectively and efficiently “grow” layers of 2D transition metal dichalcogenide (TMD) materials directly on top […]
Easy-to-make, ultra-low power electronics could charge out of thin air
Nanowerk October 14, 2020 An international team of researchers (China, UK, Saudi Arabia) has developed a technology that delivers high-performance electronic circuits based on thin-film transistors which are ‘ambipolar’ in deep subthreshold region. The ‘deep-subthreshold ambipolar’ refers to unprecedented ultra-low operating voltages and power consumption levels. They created printed electronics that meet the power and voltage requirements of real-world applications and opened opportunities for remote sensing and ‘place-and-forget’ devices that can operate without batteries for their entire lifetime. The ultra-low-power printed electronics are simple and cost-effective to manufacture. It can be scaled up to make inexpensive battery-less devices that could […]
NIST scientists create new recipe for single-atom transistors
EurekAlert May 11, 2020 Using a room temperature grown locking layer and precise control over the entire fabrication process, a team of researchers in the US (NIST, University of Maryland) reduced unintentional dopant movement while achieving high quality epitaxy in scanning tunneling microscope (STM)-patterned devices. They demonstrated the exponential scaling of the tunneling resistance on the tunnel gap as it is varied from 7 dimer rows to 16 dimer rows, the capability to reproducibly pattern devices with atomic precision and a donor-based fabrication process where atomic scale changes in the patterned tunnel gap result in the expected changes in the […]
Researchers demonstrate a platform for future optical transistors
EurekAlert April 9, 2020 The inability of photons to interact well with each other is a drawback in developing optical transistors. An international team of researchers (Russia, Iceland, UK) demonstrated a new efficient implementation, where photons couple to excitons in single-layer semiconductors. They created polaritons with the help of a laser, a waveguide, and an extremely thin molybdenum diselenide semiconductor layer trapping them in the system. Polaritons obtained in this way not only exist for relatively long periods of time, but also have extra high nonlinearity, meaning that they actively interact with each other. The work brings us closer to […]
Scientists create fully electronic 2-D spin transistors
Nanowerk September 17, 2019 Using gold electrodes, researchers in the Netherlands were able to send a pure charge current through graphene and generate a spin current, referred to as the Rashba-Edelstein effect. This happens due to the interaction with the heavy atoms of the TMD monolayer (in this case, tungsten disulfide). The charge current induces a spin current in the graphene, which they could measure with spin-selective ferromagnetic cobalt electrodes. The charge-to-spin conversion makes it possible to build all-electrical spin circuits with graphene. They showed that the efficiency of the generation of the spin accumulation can be tuned by the […]
Single-electrode material streamlines functions into a tiny chip
Phys.org July 29, 2019 An international team of researchers (Saudi Arabia, USA – Georgia Institute of Technology) has demonstrated transistor‐level integration of electrochemical microsupercapacitors and thin film transistor rectifiers using ruthenium oxide as the common electrode material connecting all devices in the microcircuits. Thin film rectifiers are shown to be capable of rectifying AC signal input from either triboelectric nanogenerators or standard function generators. They exhibit exceptionally slow self‐discharge rate and sufficient power to drive various electronic devices. The study opens a new avenue for developing compact on‐chip electrochemical micropower units integrated with thin film electronics, simplifying device fabrication and […]
Researchers ‘stretch’ the ability of 2-D materials to change technology
Phys.org June 10, 2019 An international team of researchers (USA – University of Rochester, China) developed a platform and deposited a flake of molybdenum ditelluride (MoTe2) onto a ferroelectric material. When voltage is applied to the ferroelectric—which acts like a transistor’s third terminal, the 2-D material by the piezoelectric effect, causing it to stretch. When stretched, by about 0.4 percent, and unstretched, the MoTe2 changes from a low conductivity semiconductor material to a highly conductive semi metallic material and back again. It operates just like a field effect transistor. The process works at room temperature and requires only a small […]
Beyond 1 and 0: Engineers boost potential for creating successor to shrinking transistors
Eurekalert May 29, 2019 Through theory, design and simulations an international team of researchers (South Korea, USA – UT Dallas) developed the fundamental physics of a multi-value logic transistor that uses a novel configuration of two forms of zinc oxide combined to form a composite nanolayer, which is then incorporated with layers of other materials in a superlattice. The device is capable of two electronically stable and reliable intermediate states between 0 and 1, boosting the number of logic values per transistor from two to three or four. The multi-value transistors exhibited excellent performance characteristics, stable and reliable operation with […]