Phys.org June 10, 2019
An international team of researchers (USA – University of Rochester, China) developed a platform and deposited a flake of molybdenum ditelluride (MoTe2) onto a ferroelectric material. When voltage is applied to the ferroelectric—which acts like a transistor’s third terminal, the 2-D material by the piezoelectric effect, causing it to stretch. When stretched, by about 0.4 percent, and unstretched, the MoTe2 changes from a low conductivity semiconductor material to a highly conductive semi metallic material and back again. It operates just like a field effect transistor. The process works at room temperature and requires only a small amount of strain. The platform has the potential to perform the same functions as a transistor with far less power and minimizes the leakage of electrical current…read more. TECHNICAL ARTICLE
Artist’s rendering of a 2D material undergoing phase change using a transistor-scale platform. Credit: University of Rochester illustration / Michael Osadciw