Phys.org February 21, 2024
An international team of researchers (Germany, UK, US – NERL, Switzerland, Ukraine) developed the constant light induced magneto transport method which resolves electron and hole mobility, lifetime, diffusion coefficient and length, and quasi-Fermi level splitting and demonstrated their implication of the constant light induced magneto transport for silicon and metal halide perovskite films. They resolved the transport properties of electrons and holes predicting the material’s effectiveness for solar cell application without making the full device. The accessibility of fourteen material parameters paved the way for in-depth exploration of causal mechanisms limiting the efficiency and functionality of material structures. They characterized twelve materials with drift mobilities spanning from 10–3 to 103 cm2V–1s–1 and lifetimes varying between 10–9 and 10–3 seconds to demonstrate broad applicability. According to the researchers the universality of their method has the potential to advance optoelectronic devices in various technological fields… read more. Open Access TECHNICAL ARTICLE
14 parameters in one go: New instrument for optoelectronics
Posted in Optoelectronics and tagged Light induced transport, Magneto transport, Metal halide perovskite.