Ultrafast lasers map electrons ‘going ballistic’ in graphene with implications for next-gen electronic devices

Phys.org December 15, 2023
Researchers at the University of Kansas formed heterostructure by sandwiching a MoS2 and MoSe2 heterobilayer between two graphene monolayers. Transient absorption measurements revealed that the electrons and holes separated by the type-II interface between MoS2 and MoSe2 could transfer to the two graphene layers, respectively. With high spatial and temporal resolution, they found that while the holes in one graphene layer undergoes a classical diffusion process with a large diffusion coefficient of 65 cm2 s–1 and a charge mobility of 5000 cm2 V–1 s–1, the electrons in the other graphene layer exhibits a quasi-ballistic transport feature. The different in-plane transport properties confirmed that electrons and holes move independently of each other as charge carriers. According to the researchers the optical generation of ballistic charge carriers suggested potential applications for such van der Waals heterostructures as optoelectronic materials… read more. TECHNICAL ARTICLE

Graphical abstract. Credit: ACS Nano , XXXX, XXX, XXX-XXX, December 13, 2023 

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