Science Daily May 29, 2020
To achieve passivation in gallium arsenide a team of researchers in the US (SUNY Buffalo, Stanford University) added a layer of SU-8, an epoxy-based polymer commonly used in microelectronics. In tests the transistor could handle 8,032 volts before breaking down, which is more than similarly designed transistors made of silicon carbide or gallium nitride. The higher the breakdown voltage, the more power a device can handle. Simulations suggest the transistor has a field strength of more than 10 million volts per centimeter. The transistor could lead to smaller and more efficient electronic systems that control and convert electric power in electric cars, locomotives, and airplanes…read more. Open Access TECHNICAL ARTICLE
(a) Device schematic. (b) Optical microscope image of Lgd=30μm MOSFET. (c) Optical microscope image of MOSFET after breakdown. Credit: IEEE Electron Device Letters Volume: 41 , Issue: 6 , April 29, 2020