Vanadium dioxyde: A revolutionary material for tomorrow’s electronics

EurekAlert  February 5, 2018
An international team of researchers (Switzerland, Germany) working on the EU Horizon 2020 project called Phase-Change Switch found that the atomic structure of the metal-insulator vanadium dioxide (VO2) changes as the temperature rises, transitioning from a crystalline structure at room temperature to a metallic one at temperatures above 68°C. They found that adding germanium to VO2 film can lift the material’s phase change temperature to over 100°C required for modern electronic devices. The technology is particularly effective in the frequency range crucial for space communication systems (the Ka band, with programmable frequency modulation between 28.2 and 35 GHz)… read more. Open Access TECHNICAL ARTICLE

VANADIUM DIOXYDE CHIP DEVELOPED AT EPFL’S NANOLAB. CREDIT: EPFL / JAMANI CAILLET

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