Next Big Future May 29, 2019 Researchers in China have fabricated high-performance negative capacitance p-type FinFETs (p-FinFETs) with a 3-nm-thick ferroelectric (FE) hafnium zirconium oxides layer based on a conventional high-κ metal gate FinFETs fabrication flow. The devices show improved subthreshold swing values and slight hysteresis voltages with the integrated FE film and a strong driving current enhancement (up to 260%) is also obtained compared with that of conventional FinFETs. The inherent reasons for the improved characteristics contribute to the low-interface state density and perfect channel electrostatic integrity. Samsung, Intel and Taiwan Semiconductor will be commercially producing 3-nanometer chips in […]
Tag Archives: transistors
One transistor for all purposes
Nanowerk March 19, 2019 Until now, organic semiconductors have failed to achieve high performance in highly integrated sub-100 nm transistors. Using a vertical field-effect transistor design with a channel length of only 40 nm and a footprint of 2 × 80 × 80 nm2, researchers in Germany show that high electrical performance with organic polymers can be realized when using electrolyte gating. These organic transistors combine high on-state current densities of above 3 MA cm−2, on/off current modulation ratios of up to 108 and large transconductances of up to 5,000 S m−1. These structures show promise for use in artificial neural networks, where they could operate as memristive devices with sub-100 fJ […]
Chipmakers Test Ferroelectrics as a Route to Ultralow-Power Chips
IEEE Spectrum February 26, 2018 Researchers at a company in the US chose a ferroelectric material that does not require ions or atoms to relocate which slows things down in ferroelectric materials. In their experimental 14-nm transistors, clouds of electrons around silicon-doped hafnium dioxide experience the polarization. Ring oscillators made with these transistors can switch at the same frequency as those made with the usual recipe, yet they require just 54 mV to achieve a tenfold increase in the current. Their devices require a 3- to 8-nm-thick layer of ferroelectric material, which is still relatively thick… read more. Related TECHNICAL […]