China Publishes Research on Competitive 3-Nanometer Chip

Next Big Future  May 29, 2019
Researchers in China have fabricated high-performance negative capacitance p-type FinFETs (p-FinFETs) with a 3-nm-thick ferroelectric (FE) hafnium zirconium oxides layer based on a conventional high-κ metal gate FinFETs fabrication flow. The devices show improved subthreshold swing values and slight hysteresis voltages with the integrated FE film and a strong driving current enhancement (up to 260%) is also obtained compared with that of conventional FinFETs. The inherent reasons for the improved characteristics contribute to the low-interface state density and perfect channel electrostatic integrity. Samsung, Intel and Taiwan Semiconductor will be commercially producing 3-nanometer chips in 2020 or 2021...read more.

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