Physorg.com December 27, 2017 Researchers in Japan combined silicon with ytterbium to create ytterbium silicide which is a good electrical conductor, non-toxic and has valence fluctuation that makes it a good TE material at low temperatures. The Yb atoms in YbSi2 occupy crystal planes and the Si atoms form hexagonal sheets between those planes blocking the conduction of heat through the material keeping the thermal conductivity down. They have achieved high power factor of 2.2 mWm-1K-2 at room temperature. The research could help unlock the benefits of TE in everyday technology. Read more. TECHNICAL ARTICLE
Tag Archives: S&T Japan
Innovative transistors based on magnetically induced movement of ions
Nanowerk December 27, 2017 The transport of paramagnetic FeCl4 ions in a liquid electrolyte (including [Bmim]FeCl4) demonstrated by researchers in Japan, was magnetically controlled to operate a typical electrochemical device; an Electric Double Layer Transistor (EDLT), a type of transistor that uses an EDL at a semiconductor/electrolyte interface to tune the electronic carrier density of the semiconductor. The device was successfully switched by a magnetic field, although the switching ratio was smaller than in conventional EDLTs that are controlled by an electric field. The research has the potential to realize innovative applications that have not been possible using conventional approaches. […]
Atomically thin perovskites boost for future electronics
Physorg.com December 27, 2017 High-κ dielectric materials may be the key for developing electronic devices of the future. Researchers in Japan created high-performance dielectric nanofilms using 2-D perovskite nanosheets (Ca2Nam−3NbmO3m+1; m = 3–6) as building blocks. It exhibited an unprecedented capacitance density of approximately 203 μF cm-2, which is about three orders of magnitude greater than that of currently available ceramic condensers, opening a route to ultra-scaled high-density capacitors. The research provides a strategy for achieving 2-D high-κ dielectrics/ferroelectrics for use in ultra-scaled electronics and post-graphene technology. Read more. TECHNICAL ARTICLE Credit: National Institute for Materials Science