Atomically thin perovskites boost for future electronics

Physorg.com  December 27, 2017
High-κ dielectric materials may be the key for developing electronic devices of the future. Researchers in Japan created high-performance dielectric nanofilms using 2-D perovskite nanosheets (Ca2Nam−3NbmO3m+1; m = 3–6) as building blocks. It exhibited an unprecedented capacitance density of approximately 203 μF cm-2, which is about three orders of magnitude greater than that of currently available ceramic condensers, opening a route to ultra-scaled high-density capacitors. The research provides a strategy for achieving 2-D high-κ dielectrics/ferroelectrics for use in ultra-scaled electronics and post-graphene technology. Read more.  TECHNICAL ARTICLE 

Credit: National Institute for Materials Science

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