Science Daily   March 25, 2024 Quantum behaviour presents an unresolved challenge facing electronics at the few-nanometre scale: resistive channels start leaking owing to quantum tunnelling which affect the performance of nanoscale transistors, with direct source–drain tunnelling degrading switching ratios. The strategy to mitigate quantum effects has been to increase device complexity. An international team of researchers (UK, Canada, Italy) demonstrated how the performance of molecular transistors was improved when the resistive channel contained two destructively interfering waves. They used a zinc-porphyrin coupled to graphene electrodes in a three-terminal transistor to demonstrate a >104 conductance-switching ratio, a subthreshold swing at the […]