Science Daily December 13, 2021
An international team of researchers (Japan, USA – National Renewable Energy Laboratory) has fabricated n-type conductive SnS thin films by impurity doping. Conventional SnS thin films are usually p-type conductive. Thus, SnS thin-film solar cells have been fabricated using a pn heterojunction with p-type SnS thin film and other n-type semiconductor thin films, such as CdS. However, the conversion efficiency of such heterojunction devices is approximately 5%. The SnS thin-film solar cells employing a pn homojunction, which uses SnS thin films for both p-type and n-type layers, is expected to exhibit higher conversion efficiency. Utilizing chlorine-doping and a sulfur plasma supply, they reduced the lattice defects inhibiting the n-type conversion of SnS, realizing the n-type SnS thin films without toxic elements…read more. Open Access TECHNICAL ARTICLEÂ
Structural, compositional, and morphological analysis of Cl-doped SnS thin films deposited with and without a sulfur plasma supply…. Credit: Phys. Rev. Materials 5, 125405, 9 December 2021Â