Nanowerk September 9, 2021
Researchers in Japan used the surface activated bonding (SAB) method to successfully bond GaN and diamond and demonstrated that the bonding is stable even when heated to 1,000°C. A 5.3 nm-thick intermediate layer composed of amorphous carbon and diamond is formed at the as-bonded heterointerface. As the team increased annealing temperatures, the layer thickness decreased suggesting the intermediate layer can be completely removed by optimizing the annealing process. As no peeling was observed at the heterointerface after annealing at 1000°C these results indicate that the GaN/diamond heterointerface can withstand harsh fabrications processes. The material shows promise as a next-generation semiconductor material…read more. TECHNICAL ARTICLEÂ