Researchers demonstrate the potential of a new quantum material for creating two spintronic technologies  February 3, 2021
Finding materials with the exact characteristics necessary to fabricate Antiferromagnetic (AFM) spintronics has so far proved to be highly challenging. An international team of researchers (USA – UC Berkeley, Lawrence Berkeley National Laboratory, National High Magnetic Field Laboratory, UCLA, Israel) has identified a new quantum material (Fe1/3 + δNbS2) that could be used to fabricate AFM spintronic devices. They demonstrated that antiferromagnetic switching in the intercalated transition-metal dichalcogenide (TMD)-based compounds have a huge ‘exchange bias’, single-pulse saturation and a significantly lower activation energy. They showed that the coexistence of spin glass and antiferromagnetic order allows a novel mechanism to facilitate the switching of the antiferromagnet Fe1/3 + δNbS2, rooted in the electrically stimulated collective winding of the spin glass. The local texture of the spin glass opens an anisotropic channel of interaction that can be used to rotate the equilibrium orientation of the antiferromagnetic state. Manipulating antiferromagnetic spin textures using a spin glass’ collective dynamics opens the field of antiferromagnetic spintronics to new material platforms with complex magnetic textures…read more. TECHNICAL ARTICLE   1 Open Access,  2  Open Access,   3

Electrical switching of Fe1/3NbS2. Credit: Nature Materials volume 19, pages153–157(2020)

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