Phys.org  February 3, 2021 Finding materials with the exact characteristics necessary to fabricate Antiferromagnetic (AFM) spintronics has so far proved to be highly challenging. An international team of researchers (USA – UC Berkeley, Lawrence Berkeley National Laboratory, National High Magnetic Field Laboratory, UCLA, Israel) has identified a new quantum material (Fe1/3 + δNbS2) that could be used to fabricate AFM spintronic devices. They demonstrated that antiferromagnetic switching in the intercalated transition-metal dichalcogenide (TMD)-based compounds have a huge ‘exchange bias’, single-pulse saturation and a significantly lower activation energy. They showed that the coexistence of spin glass and antiferromagnetic order allows a […]