Science Daily October 29, 2020
So far, most research on quantum dot electronic devices has focused on materials based on Pb- and Cd chalcogenides. In addition to environmental concerns associated with the presence of toxic metals, these quantum dots are not well suited for applications in CMOS circuits due to difficulties in integrating complementary n- and p-channel transistors in a common quantum dot active layer. A team of researchers in the US (Los Alamos National Laboratory, UC Irvine) demonstrated that by using heavy-metal-free CuInSe2 quantum dots, they could address the problem of toxicity and simultaneously achieve straightforward integration of complimentary devices to prepare functional CMOS circuits. Specifically, utilizing the same spin-coated layer of CuInSe2 quantum dots, they realized both p- and n-channel transistors and demonstrated well-behaved integrated logic circuits with low switching voltages compatible with standard CMOS electronics. Potential applications of the new approach include printable circuits, flexible displays, lab-on-a-chip diagnostics, wearable devices, medical testing, smart implants, and biometrics…read more. Open Access TECHNICAL ARTICLE