Science Daily  October 29, 2020 So far, most research on quantum dot electronic devices has focused on materials based on Pb- and Cd chalcogenides. In addition to environmental concerns associated with the presence of toxic metals, these quantum dots are not well suited for applications in CMOS circuits due to difficulties in integrating complementary n- and p-channel transistors in a common quantum dot active layer. A team of researchers in the US (Los Alamos National Laboratory, UC Irvine) demonstrated that by using heavy-metal-free CuInSe2 quantum dots, they could address the problem of toxicity and simultaneously achieve straightforward integration of complimentary […]