Phys.org September 23, 2020
An international team of researchers (China, Japan, Germany) developed a novel type of quantum emitter formed from spatially separated monolayer islands of InGaN sandwiched in a GaN matrix. They first grew a planar structure of InGaN monolayer islands using molecular beam epitaxy, and then patterned the sample into pillars using nanoimprint lithography and inductively-coupled plasma reactive-ion etching. Detailed optical analysis of the emission properties of the isolated monolayer islands showed that the main emission line could be spectrally filtered to act as a bright, and fast single photon emitter at a wavelength of ~ 400 nm, with a high degree of photostability. III-nitride materials were chosen for this study because they are expected to offer several advantages for the development of future devices including a wide tunability in emission wavelength, compatibility with silicon substrates for growth, and support from industrial infrastructure for device fabrication. The new structure could open new opportunities for further quantum devices…read more. Open Access TECHNICAL ARTICLE
Structural analysis of the monolayer structure. Credit: Light: Science & Applications volume 9, Article number: 159 (2020)