Science Daily January 7, 2020
The combination of gallium nitride and silicon carbide ensures that the circuits are suitable for applications in which high powers are needed. However, the fit at the surface end up mismatched with each other, which leads to failure of the transistor. The problem was addressed by placing aluminium nitride between the two layers. An international team of researchers (Sweden, France) discovered a previously unknown epitaxial growth mechanism that they have named “transmorphic epitaxial growth.” It causes the strain between the different layers to be gradually absorbed across a couple of layers of atoms allowing grow gallium nitride and aluminium nitride, on silicon carbide controlling how the layers are related to each other in the material. They have shown that the material withstands high voltages, up to 1800 V…read more. Open Access TECHNICAL ARTICLE