New method gives robust transistors

Science Daily  January 7, 2020 The combination of gallium nitride and silicon carbide ensures that the circuits are suitable for applications in which high powers are needed. However, the fit at the surface end up mismatched with each other, which leads to failure of the transistor. The problem was addressed by placing aluminium nitride between the two layers. An international team of researchers (Sweden, France) discovered a previously unknown epitaxial growth mechanism that they have named “transmorphic epitaxial growth.” It causes the strain between the different layers to be gradually absorbed across a couple of layers of atoms allowing grow […]