Science Daily December 23, 2019
An international team of researchers (USA – SUNY New York, Los Alamos National Laboratory, Rensselaer Polytechnic Institute, China) has fabricated barium zirconium sulfide (BaZrS3) thin films by sulfurization of oxide films deposited by pulsed laser deposition. They showed that these films are n-type with carrier densities in the range of 1019-1020 cm−3. Temperature dependent conductivity measurements suggest shallow donor levels. By assuring that BaZrS3 is a promising candidate, these results potentially unleash a family of chalcogenide perovskites for optoelectronics such as photodetectors, photovoltaics, and light emitting diodes…read more. TECHNICAL ARTICLE
Graphical abstract. Credit: Nano Energy, 22 November 2019