Mind the gap – new wide-bandgap topological insulator

Nanowerk  December 17, 2019
To construct electronic devices with low-energy consumption the low-dissipation surface states of topological insulators (TIs) are widely employed. But practical applications of TIs have been severely limited by the small electronic bandgaps in most known materials. To achieve stability researchers in Australia used a scheme based on co-substitution of sulphur balanced by a small amount of larger vanadium and tin ions resulting the complex material Vx:Bi1.08-xSn0.02Sb0.9Te2S. They demonstrated that the surface dominant transport behavior can survive above 50 K. The robust surface states in V doped single crystal systems provide an ideal platform to study the Dirac fermions and their interaction with other materials above 50 K…read more. Open Access TECHNICAL ARTICLE

Transport measurement geometry: measuring a freshly cleaved V:BSSTS surface. (Image: FLEET)

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