EurekAlert November 27, 2019
The bottom up approaches for atomic and molecular electronics, quantum computation, and data storage, all rely on a well-developed understanding of materials at the atomic scale. Researchers in Canada have developed a scanning tunneling microscope (STM) charge characterization technique which reduces the influence of the typically perturbative STM tip field for this purpose. Using the technique, they observed single molecule binding events to atomically defined reactive sites. They developed a simplified error correction tool for automated hydrogen lithography and incorporated the molecular repassivation technique as the primary rewriting mechanism in ultra-dense atomic data storage designs. The new tool better enables an ultra-efficient kind of hybrid computer for the training of neural networks for artificial intelligence…read more. Video illustration of the process. Open Access TECHNICAL ARTICLE
Abstract. Credit: ACS Nano 2019, XXXX, XXX, XXX-XXX Publication Date: November 27, 2019Â