Eurekalert August 15, 2019
The possibility of generalizing the Quantum Hall Effect (QHE ) to 3D electronic systems was proposed decades ago. Now an international team of researchers (China, USA – Brookhaven National Laboratory, Florida State University, MIT, Singapore) reports the experimental realization of the 3D QHE in bulk zirconium pentatelluride (ZrTe5) crystals. When they cooled the material to very low temperature while under a moderate magnetic field, its longitudinal resistivity drops to zero, indicating that the material transforms from a metal to an insulator. Using this unique material, the electrons can move through the surfaces, giving a Hall resistivity. The discovery of 3D QHE is expected to lead to new breakthroughs in our knowledge of physics and provide new physical effects. In one way or another, it will also provide us new opportunities for practical technology development…read more. TECHNICAL ARTICLE
An illustration of the 3D quantum Hall effect. Under enhanced interaction effects, the electrons form a special charge density wave along the applied magnetic field. The interior becomes insulating, while the conduction is through the surface of the material. Credit: Wang Guoyan & He Cong