Nanowerk June 29, 2018
Gallium nitride’s defects and degradation are due to the atoms being displaced in the crystal lattice structure. An international team of researchers (Greece, Algeria, France) used computational analysis to determine the structural and electronic properties of a-type basal edge dislocations along the <1-100> direction in GaN which are common in semipolar growth orientations. They studied three models with different core configurations – three nitrogen atoms and one gallium atom for the Ga polarity; four N atoms and two Ga atoms; two N atoms and two Ga core-associated atoms. They found a connection between the smaller bandgap values and the great number of states inside them. These findings potentially demonstrate the role of nitrogen as a major contributor to dislocation-related effects in GaN-based devices… read more. Open Access TECHNICAL ARTICLEÂ
Distribution of stresses wurtzite GaN. (Image: Physics Department, Aristotle University of Thessaloniki)