Nanowerk June 29, 2018 Gallium nitride’s defects and degradation are due to the atoms being displaced in the crystal lattice structure. An international team of researchers (Greece, Algeria, France) used computational analysis to determine the structural and electronic properties of a-type basal edge dislocations along the <1-100> direction in GaN which are common in semipolar growth orientations. They studied three models with different core configurations – three nitrogen atoms and one gallium atom for the Ga polarity; four N atoms and two Ga atoms; two N atoms and two Ga core-associated atoms. They found a connection between the smaller bandgap […]