Science Daily  May 24, 2018
An international team of researchers (Czech Republic, Germany, UK, Switzerland, USA – Texas A&M, Saudi Arabia) has demonstrated at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to terahertz using an antiferromagnet. A current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the 12-order-of-magnitude range of writing speeds from hertz to terahertz. The work opens the path toward the development of memory-logic technology reaching the terahertz band… read more. Open Access TECHNICAL ARTICLE 1Â , TECHNICAL ARTICLE 2