Nanowerk  March 27, 2018
Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. Researchers at UC Santa Barbara made III-V quantum-dot lasers using molecular beam epitaxy. They can run on less power, operate at higher temperatures and scaled down to smaller sizes. They are now testing lasers that can operate at 60 to 80 degrees Celsius, the more typical temperature range of a data center or supercomputer. Replacing the electronic components that connect devices with photonic components could cut energy use by 20 to 75 percent…read more. Open Access TECHNICAL ARTICLE
One type of laser that’s particularly suited for quantum dots is a mode-locked laser, which passively generates ultrashort pulses less than one picosecond in duration. (Image: Peter Allen)